A new technology that can improve the quality of LED luminous materials

Recently, foreign media reported that North Carolina State University has discovered a new technology to improve the quality of LED luminescent materials by reducing 2-3 orders of magnitude defects in GaN thin films.

According to the researchers, the same input energy can produce twice as much output light energy through this technology, which is very impressive for LEDs with low power input and UV emission range.

LED lighting mainly relies on light-emitting diodes of GaN thin films. The researchers embedded half the thickness of a 2 μm thick GaN thin film into a 2 μm wide, 0.5 μm spatial gap. Later, it was discovered that many defects would be attracted and trapped in these. Void space. This leads to a reduction in void space with many defects. As a result, they effectively placed some void space in the film and successfully prevented the defect from spreading to the rest of the film. Without this gap technology, there will be approximately 1010 defects per square centimeter of GaN thin film. However, using this technique, the defect per square centimeter will drop to about 107. In this way, higher quality, more efficient light emitting diodes can be manufactured.

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