In the cognitive system of artificial intelligence, the core objective is to enable machines to think and learn in a way that closely resembles human cognition, utilizing advanced techniques like neural networks and deep learning. In the world of machines, data is represented by binary digits—0s and 1s—and this requires vast amounts of data to support machine decision-making. Historically, one of the main barriers to AI development was the limited processing power of CPUs. As data volumes exploded, traditional storage solutions struggled not only with the need for high-speed computation but also with the cost of long-term data retention. This led many companies to seek out innovative storage alternatives.
In 2017, the global storage market reached an impressive scale of $95 billion, with supply shortages driving a 64% increase in memory chip revenue. Samsung even surpassed Intel for the first time in the semiconductor market, highlighting the growing importance of the storage industry. Today, most major storage vendors are focusing on developing compact, high-capacity, low-power storage devices tailored for the demands of the AI era. Recently, Sylvain Dubois, Vice President of Strategic Marketing and Business Development at Crossbar—a pioneer in ReRAM technology—shared insights into their latest advancements with reporters.
ReRAM technology, developed by Crossbar, is emerging as a game-changer in non-volatile memory. It addresses key limitations of DRAM and Flash, offering superior performance and density. According to Dubois, "ReRAM uses a silicon-based material to form conductive filaments between two electrodes. These nanoscale filaments allow for high-density storage, cross-line structures, and process nodes below 10nm. The 3D stacking capability enables terabytes of storage on a single chip."
What makes ReRAM particularly compelling is its compatibility with CMOS technology, enabling logic and memory to be integrated on the same chip. This means that CPU chips can utilize previously unused space for internal memory, significantly increasing storage capacity without requiring external storage. With ReRAM, a CPU could potentially have 256GB or more of internal memory, allowing direct data analysis without relying on bus bandwidth, which enhances both speed and security.
Moreover, ReRAM operates at extremely low power, consuming 100 times less energy than flash memory when powered off. During demonstrations at CES, ReRAM achieved erasing speeds of up to 200W, far surpassing current standards. This level of performance, combined with high reliability and durability, positions ReRAM as a promising solution for AI-driven big data processing.
High-temperature stability is another critical factor in AI applications, especially in data centers where heat can degrade performance. ReRAM, however, remains stable across a wide temperature range—from -40°C to 125°C. It supports over 2 million write cycles and retains data for up to 10 years at 85°C, without read/write interference. This makes it a more reliable alternative to Flash memory.
Crossbar has adopted an IP licensing model, allowing SoC vendors and independent memory designers to integrate ReRAM into their products. This approach fosters collaboration rather than competition, making it easier for companies to adopt the technology. ReRAM is compatible with both dedicated memory foundries and CMOS foundries, and Crossbar has already partnered with SMIC on 40nm processes. Looking ahead, they are working on 28nm, 14nm, and sub-10nm nodes, with expectations of mass production by mid-2018.
The potential impact of ReRAM on consumer electronics, AI, IoT, and other industries is immense. If widely adopted, it could significantly improve cost-performance ratios and position Crossbar as a key player in the storage landscape. As Dubois concluded, “With over 310 patent applications and 160 granted, we aim to collaborate with more customers and drive breakthroughs in storage technology. ReRAM has the potential to revolutionize AI, big data, mobile computing, and beyond.â€
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