In the cognitive system of artificial intelligence, the ultimate goal is to enable machines to think as closely as possible to humans using neural networks and deep learning. In the digital world, machines operate on binary code—0s and 1s—which demands vast amounts of data to support their decision-making processes. Historically, the main obstacle to AI development was the limited processing power of CPUs. As data volumes exploded, traditional storage solutions could no longer keep up with the demand for high-speed computing or afford the costs of long-term data retention, prompting companies to seek innovative storage alternatives.
By 2017, the global storage market reached a staggering $95 billion, with supply shortages driving memory chip revenue up by 64%. Samsung even overtook Intel in the semiconductor industry that year, highlighting the growing importance of storage. To meet the needs of the AI era, major storage vendors are now focusing on developing compact, high-capacity, low-power storage devices. Recently, Sylvain Dubois, Vice President of Strategic Marketing and Business Development at Crossbar—a leader in ReRAM technology—shared insights into the future of storage.
ReRAM, or Resistive Random Access Memory, represents a breakthrough in non-volatile memory. Unlike traditional DRAM or Flash, it uses silicon-based materials to form conductive filaments between electrodes, enabling ultra-fast read/write speeds and high density. According to Dubois, "ReRAM can achieve densities up to 40 times greater than DRAM, with performance and reliability that make it ideal for AI applications." He also mentioned that ReRAM's erasing speed can reach 200W, making it significantly faster than current technologies.
One of the key advantages of ReRAM is its compatibility with CMOS technology, allowing logic and memory to be integrated on a single chip. This means more storage can be embedded directly within the CPU, reducing the need for external memory and improving both speed and security. With ReRAM, data can be processed internally without relying on bus bandwidth, which enhances efficiency and reduces latency.
In terms of thermal stability, ReRAM outperforms other memory types. It maintains reliability across a wide temperature range—from -40°C to 125°C—and can endure up to 2 million write cycles while retaining data for 10 years at 85°C. This makes it particularly suitable for data centers and AI systems where heat management is critical.
Crossbar employs an IP licensing model, offering ReRAM technology to SoC designers and independent memory manufacturers. The technology can be produced on both dedicated memory foundries and CMOS-compatible lines, such as SMIC. Dubois noted that mass production is expected in mid-2018, with ongoing R&D targeting smaller process nodes like 28nm, 14nm, and below 10nm.
The company has already attracted interest from major tech players, including BAT in China and Amazon and Google abroad. With over 310 patent applications and 160 granted, Crossbar aims to expand its partnerships and drive further innovation. Dubois concluded, “We believe ReRAM has the potential to revolutionize storage across AI, IoT, big data, mobile computing, automotive, and industrial sectors.†If adopted widely, ReRAM could significantly enhance the cost-performance of consumer electronics, positioning Crossbar as a key player in the storage industry.
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